The WST2088 MOSFETs are the most advanced N-channel transistors on the market. They have an incredibly high cell density, which results in excellent RDSON and gate charge. These MOSFETs are perfect for small power switching and load switch applications. They meet RoHS and Green Product requirements and have been fully tested for reliability.Advanced Trench technology with high cell density, Super Low Gate Charge, and excellent Cdv/dt effect decline, making it a Green Device.AO AO3416, DINTEK DTS2300A DTS2318 DTS2314 DTS2316 DTS2322 DTS3214, etc.
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
ID@Tc=25℃
Continuous Drain Current, VGS @ 4.5V
8.8
A
ID@Tc=70℃
Continuous Drain Current, VGS @ 4.5V
6.2
A
IDP
Pulsed Drain Current
40
A
PD@TA=25℃
Total Power Dissipation
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
---
---
V
△BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25℃, ID=1mA
---
0.018
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=6A
---
8
13
mΩ
VGS=2.5V, ID=5A
---
10
19
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.5
---
1.3
V
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V.
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
Qg
Total Gate Charge
VDS=15V , VGS=4.5V , ID=6A
---
16
---
nC
Qgs
Gate-Source Charge
---
3
---
Qgd
Gate-Drain Charge
---
4.5
---
Td(on)
Turn-On Delay Time
VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A
---
10
---
ns
Tr
Rise Time
---
13
---
Td(off)
Turn-Off Delay Time
---
28
---
Tf
Fall Time
---
7
---
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
1400
---
pF
Coss
Output Capacitance
---
170
---
Crss
Reverse Transfer Capacitance
---
135
---
Power applications, circuits with hard switching and high frequency, uninterrupted power supplies, e-cigarettes, controllers, electronic devices, small home appliances, and consumer electronics.
