The WSP4888 is a high-performing transistor with a dense cell structure, ideal for use in synchronous buck converters. It boasts excellent RDSON and gate charges, making it a top choice for these applications. Additionally, the WSP4888 meets both RoHS and Green Product requirements and comes with a 100% EAS guarantee for reliable function.Advanced Trench Technology features high cell density and super low gate charge, significantly reducing the CdV/dt effect. Our devices come with a 100% EAS guarantee and environmentally friendly options. Our MOSFETs undergo strict quality control measures to ensure they meet the highest industry standards. Each unit is thoroughly tested for performance, durability and reliability, ensuring a long product life. Its rugged design enables it to withstand extreme working conditions, ensuring uninterrupted equipment functionality. Competitive pricing: Despite their superior quality, our MOSFETs are highly competitively priced, providing significant cost savings without compromising performance. We believe that all consumers should have access to high-quality products, and our pricing strategy reflects this commitment. Broad compatibility: Our MOSFETs are compatible with a variety of electronic systems, making them a versatile choice for manufacturers and end-users. It integrates seamlessly into existing systems, enhancing overall performance without requiring major design modifications.AOS AO4832 AO4838 AO4914,ON NTMS4916N,VISHAY Si4128DY,INFINEON BSO150N03MD G,Sinopower SM4803DSK,dintek DTM4926 DTM4936,ruichips RU30D10H

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1	9.8	A
ID@TC=70℃	Continuous Drain Current, VGS @ 10V1	8.0	A
IDM	Pulsed Drain Current2	45	A
EAS	Single Pulse Avalanche Energy3	25	mJ
IAS	Avalanche Current	12	A
PD@TA=25℃	Total Power Dissipation4	2.0	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=1mA	---	0.034	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=8.5A	---	13.5	18	mΩ
		VGS=4.5V , ID=5A	---	18	25
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.5	1.8	2.5	V
△VGS(th)	VGS(th) Temperature Coefficient		---	-5.8	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=25℃	---	---	1	uA
		VDS=24V , VGS=0V , TJ=55℃	---	---	5
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=8A	---	9	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.8	2.9	Ω
Qg	Total Gate Charge (4.5V)	VDS=15V , VGS=4.5V , ID=8.8A	---	6	8.4	nC
Qgs	Gate-Source Charge		---	1.5	---
Qgd	Gate-Drain Charge		---	2.5	---
Td(on)	Turn-On Delay Time	VDD=15V , VGEN=10V , RG=6Ω ID=1A,RL=15Ω	---	7.5	9.8	ns
Tr	Rise Time		---	9.2	19
Td(off)	Turn-Off Delay Time		---	19	34
Tf	Fall Time		---	4.2	8
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	590	701	pF
Coss	Output Capacitance		---	98	112
Crss	Reverse Transfer Capacitance		---	59	91

High Frequency Point-of-Load Synchronous Buck Converter for use in MB/NB/UMPC/VGA systems, Networking DC-DC Power Systems, Load Switches, E-cigarettes, Wireless Chargers, Motors, Drones, Medical equipment, Car Chargers, Controllers, Digital Products, Small Home Appliances, and Consumer Electronics.