The WSP4088 is the highest performance trench N-channel MOSFET with very high cell density providing excellent RDSON and gate charge for most synchronous buck converter applications. WSP4088 complies with RoHS and green product requirements, 100% EAS guarantee, full function reliability approved.Reliable and Rugged,Lead Free and Green Devices Available AO AO4884 AO4882,ON FDS4672A,PANJIT PJL9424,DINTEK DTM4916 etc.

Symbol	Parameter		Rating	Unit
Common Ratings
VDSS	Drain-Source Voltage		40	V
VGSS	Gate-Source Voltage		±20
TJ	Maximum Junction Temperature		150	°C
TSTG	Storage Temperature Range		-55 to 150
IS	Diode Continuous Forward Current	TA=25°C	2	A
ID	Continuous Drain Current	TA=25°C	11	A
		TA=70°C	8.4
IDM a	Pulsed Drain Current	TA=25°C	30
PD	Maximum Power Dissipation	TA=25°C	2.08	W
		TA=70°C	1.3
RqJA	Thermal Resistance-Junction to Ambient	t £ 10s	30	°C/W
		Steady State	60
RqJL	Thermal Resistance-Junction to Lead	Steady State	20
IAS b	Avalanche Current, Single pulse	L=0.1mH	23	A
EAS b	Avalanche Energy, Single pulse	L=0.1mH	26	mJ

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=32V, VGS=0V		-	-	1	mA
			TJ=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=250mA		1.5	1.8	2.5	V
IGSS	Gate Leakage Current	VGS=±20V, VDS=0V		-	-	±100	nA
RDS(ON) c	Drain-Source On-state Resistance	VGS=10V, IDS=7A		-	10.5	13	mW
			TJ=125°C	-	15.75	-
		VGS=4.5V, IDS=5A		-	12	16
Gfs	Forward Transconductance	VDS=5V, IDS=15A		-	31	-	S
Diode Characteristics
VSD c	Diode Forward Voltage	ISD=10A, VGS=0V		-	0.9	1.1	V
trr	Reverse Recovery Time	VDD=20V,ISD=10A, dlSD/dt=100A/ms		-	15.2	-	ns
ta	Charge Time			-	9.4	-
tb	Discharge Time			-	5.8	-
Qrr	Reverse Recovery Charge			-	9.5	-	nC
Dynamic Characteristics d
RG	Gate Resistance	VGS=0V,VDS=0V,F=1MHz		0.7	1.1	1.8	W
Ciss	Input Capacitance	VGS=0V,VDS=20V,Frequency=1.0MHz		-	1125	-	pF
Coss	Output Capacitance			-	132	-
Crss	Reverse Transfer Capacitance			-	70	-
td(ON)	Turn-on Delay Time	VDD=20V, RL=20W,IDS=1A, VGEN=10V, RG=1W		-	12.6	-	ns
tr	Turn-on Rise Time			-	10	-
td(OFF)	Turn-off Delay Time			-	23.6	-
tf	Turn-off Fall Time			-	6	-
Gate Charge Characteristics d
Qg	Total Gate Charge	VDS=20V, VGS=4.5V, IDS=7A		-	9.4	-	nC
Qg	Total Gate Charge	VDS=20V, VGS=10V, IDS=7A		-	20	28
Qgth	Threshold Gate Charge			-	2	-
Qgs	Gate-Source Charge			-	3.9	-
Qgd	Gate-Drain Charge			-	3	-

Power Management in Desktop Computer or DC/DC Converters,Electronic cigarettes, wireless charging, motors, drones, medical, car charging, controllers, digital products, small household appliances, consumer electronics, etc Note c: Pulse test ; pulse width£300ms, duty cycle£2%. Note a:  Max. current is limited by bonding wire. Note b: UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).