The WSF4022 is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.The WSF4022 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. For Fan Pre-driver H-Bridge,Motor Control,Synchronous Rectification,E-cigarettes, wireless charging, motors, emergency power supplies, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.AOS

Symbol	Parameter		Rating	Units
VDS	Drain-Source Voltage		40	V
VGS	Gate-Source Voltage		±20	V
ID	Drain Current (Continuous) *AC	TC=25°C	20*	A
ID	Drain Current (Continuous) *AC	TC=100°C	20*	A
ID	Drain Current (Continuous) *AC	TA=25°C	12.2	A
ID	Drain Current (Continuous) *AC	TA=70°C	10.2	A
IDMa	Pulsed Drain Current	TC=25°C	80*	A
EASb	Single Pulse Avalanche Energy	L=0.5mH	25	mJ
IAS b	Avalanche Current	L=0.5mH	17.8	A
PD	Maximum Power Dissipation	TC=25°C	39.4	W
PD	Maximum Power Dissipation	TC=100°C	19.7	W
PD	Power Dissipation	TA=25°C	6.4	W
PD	Power Dissipation	TA=70°C	4.2	W
TJ	Operating Junction Temperature Range		175	℃
TSTG	Operating Temperature/ Storage Temperature		-55~175	℃
RθJA b	Thermal Resistance Junction-Ambient	Steady State c	60	℃/W
RθJC	Thermal Resistance Junction to Case		3.8	℃/W

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Static
V(BR)DSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250μA	40			V
IDSS	Zero Gate Voltage Drain Current	VDS = 32V, VGS = 0V			1	µA
IDSS	Zero Gate Voltage Drain Current	VDS = 32V, VGS = 0V, TJ=85°C			30	µA
IGSS	Gate Leakage Current	VGS = ±20V, VDS = 0V			±100	nA
VGS(th)	Gate Threshold Voltage	VGS = VDS, IDS = 250µA	1.1	1.6	2.5	V
RDS(on) d	Drain-Source On-state Resistance	VGS = 10V, ID = 10A		16	21	mΩ
		VGS = 4.5V, ID = 5A		18	25	mΩ
Gate Chargee
Qg	Total Gate Charge	VDS=20V,VGS=4.5V,  ID=10A		7.5		nC
Qgs	Gate-Source Charge			3.24		nC
Qgd	Gate-Drain Charge			2.75		nC
Dynamice
Ciss	Input Capacitance	VGS=0V, VDS=20V, f=1MHz		815		pF
Coss	Output Capacitance			95		pF
Crss	Reverse Transfer Capacitance			60		pF
td (on)	Turn-on Delay Time	VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω.		7.8		ns
tr	Turn-on Rise Time			6.9		ns
td(off)	Turn-off Delay Time			22.4		ns
tf	Turn-off Fall Time			4.8		ns
Diode
VSDd	Diode Forward Voltage	ISD=1A, VGS=0V		0.75	1.1	V
trr	Input Capacitance	IDS=10A,  dlSD/dt=100A/µs		13		ns
Qrr	Output Capacitance			8.7		nC

For Fan Pre-driver H-Bridge,Motor Control,Synchronous Rectification,E-cigarettes, wireless charging, motors, emergency power supplies, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.