The WSF6012 MOSFET is a high-performance device with a high cell density design. It provides excellent RDSON and gate charge suitable for most synchronous buck converter applications. Additionally, it meets RoHS and Green Product requirements, and comes with 100% EAS guarantee for full functionality and reliability.Advanced Trench Technology with High Cell Density, Super Low Gate Charge, Excellent CdV/dt Effect Decline, 100% EAS Guarantee, and Environmentally-Friendly Device Options.AOS AOD603A,

Symbol	Parameter	Rating		Units
		N-Channel	P-Channel
VDS	Drain-Source Voltage	60	-60	V
VGS	Gate-Source Voltage	±20	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1	20	-15	A
ID@TC=70℃	Continuous Drain Current, VGS @ 10V1	15	-10	A
IDM	Pulsed Drain Current2	46	-36	A
EAS	Single Pulse Avalanche Energy3	200	180	mJ
IAS	Avalanche Current	59	-50	A
PD@TC=25℃	Total Power Dissipation4	34.7	34.7	W
TSTG	Storage Temperature Range	-55 to 150	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	60	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=1mA	---	0.063	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=8A	---	28	37	mΩ
		VGS=4.5V , ID=5A	---	37	45
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1	---	2.5	V
△VGS(th)	VGS(th) Temperature Coefficient		---	-5.24	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=25℃	---	---	1	uA
		VDS=48V , VGS=0V , TJ=55℃	---	---	5
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=8A	---	21	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	3.0	4.5	Ω
Qg	Total Gate Charge (4.5V)	VDS=48V , VGS=4.5V , ID=8A	---	12.6	20	nC
Qgs	Gate-Source Charge		---	3.5	---
Qgd	Gate-Drain Charge		---	6.3	---
Td(on)	Turn-On Delay Time	VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A	---	8	---	ns
Tr	Rise Time		---	14.2	---
Td(off)	Turn-Off Delay Time		---	24.6	---
Tf	Fall Time		---	4.6	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	670	---	pF
Coss	Output Capacitance		---	70	---
Crss	Reverse Transfer Capacitance		---	35	---

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