The WSD4098DN56 is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD4098DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Advanced high cell density Trench technology,Super Low Gate Charge,Excellent CdV/dt effect decline,100% EAS Guaranteed,Green Device AvailableHigh Frequency Point-of-Load Synchronous,Buck Converter for MB/NB/UMPC/VGA,Networking DC-DC Power System,Load Switch,E-cigarettes, wireless charging, motors, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.AOS AON6884

Symbol	Parameter		Rating	Unit
Common Ratings
VDSS	Drain-Source Voltage		40	V
VGSS	Gate-Source Voltage		±20	V
TJ	Maximum Junction Temperature		150	°C
TSTG	Storage Temperature Range		-55 to 150	°C
IS	Diode Continuous Forward Current	TA=25°C	11.4	A
ID	Continuous Drain Current	TA=25°C	22	A
		TA=70°C	22
I DM b	Pulse Drain Current Tested	TA=25°C	88	A
PD	Maximum Power Dissipation	T. =25°C	25	W
		TC=70°C	10
RqJL	Thermal Resistance-Junction to Lead	Steady State	5	°C/W
RqJA	Thermal Resistance-Junction to Ambient	t £ 10s	45	°C/W
		Steady State b	90
I AS d	Avalanche Current, Single pulse	L=0.5mH	28	A
E AS d	Avalanche Energy, Single pulse	L=0.5mH	39.2	mJ

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=32V, VGS=0V		-	-	1	mA
			TJ=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=250mA		1.2	1.8	2.5	V
IGSS	Gate Leakage Current	VGS=±20V, VDS=0V		-	-	±100	nA
R DS(ON)  e	Drain-Source On-state Resistance	VGS=10V, IDS=14A		-	6.8	7.8	m W
		VGS=4.5V, IDS=12 A		-	9.0	11
Diode Characteristics
V SD e	Diode Forward Voltage	ISD=1A, VGS=0V		-	0.75	1.1	V
trr	Reverse Recovery Time	ISD=20A, dlSD /dt=100A/µs		-	23	-	ns
Qrr	Reverse Recovery Charge			-	13	-	nC
Dynamic Characteristics f
RG	Gate Resistance	VGS=0V,VDS=0V,F=1MHz		-	2.5	-	W
Ciss	Input Capacitance	VGS=0V, VDS=20V, Frequency=1.0MHz		-	1370	1781	pF
Coss	Output Capacitance			-	317	-
Crss	Reverse Transfer Capacitance			-	96	-
td(ON)	Turn-on Delay Time	VDD =20V, RL=20W, IDS=1A, VGEN=10V, RG=6W		-	13.8	-	ns
tr	Turn-on Rise Time			-	8	-
td( OFF)	Turn-off Delay Time			-	30	-
tf	Turn-off Fall Time			-	21	-
Gate Charge Characteristics f
Qg	Total Gate Charge	VDS=20V, VGS=10V, IDS=6A		-	23	28	nC
Qg	Total Gate Charge	VDS=20V, VGS=4.5V, IDS=6A		-	22	-
Qgth	Threshold Gate Charge			-	2.6	-
Qgs	Gate-Source Charge			-	4.7	-
Qgd	Gate-Drain Charge			-	3	-