Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 40 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1 | 85 | A |
ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1 | 58 | A |
IDM | Pulsed Drain Current2 | 100 | A |
EAS | Single Pulse Avalanche Energy3 | 110.5 | mJ |
IAS | Avalanche Current | 47 | A |
PD@TC=25℃ | Total Power Dissipation4 | 52.1 | W |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
RθJA | Thermal Resistance Junction-Ambient 1 | 62 | ℃/W |
RθJC | Thermal Resistance Junction-Case1 | 2.4 | ℃/W |
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | --- | 4.5 | 6.5 | mΩ |
VGS=4.5V , ID=5A | --- | 6.4 | 8.5 | |||
VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Forward Transconductance | VDS=10V , ID=5A | --- | 27 | --- | S |
Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=10A | --- | 20 | --- | nC |
Qgs | Gate-Source Charge | --- | 5.8 | --- | ||
Qgd | Gate-Drain Charge | --- | 9.5 | --- | ||
Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V RG=3.3ΩID=1A | --- | 15.2 | --- | ns |
Tr | Rise Time | --- | 8.8 | --- | ||
Td(off) | Turn-Off Delay Time | --- | 74 | --- | ||
Tf | Fall Time | --- | 7 | --- | ||
Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 2354 | --- | pF |
Coss | Output Capacitance | --- | 215 | --- | ||
Crss | Reverse Transfer Capacitance | --- | 175 | --- | ||
IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 70 | A |
VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |