WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET
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WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

Shop the WSD2090DN56 N-channel MOSFET at our factory for reliable high voltage performance. Designed for efficiency with a 20V, 80A current capacity.

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  • WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET
  • WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET
  • WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

PRODUCTS DETAILS

The WSD2090DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD2090DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.Advanced high cell density Trench technology, Super Low Gate Charge ,Excellent CdV / dt effect decline ,100% EAS Guaranteed, Green Device AvailableAOS AON6572
Symbol Parameter Max. Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±12 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 80 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 59 A
IDM Pulsed Drain Current note1 360 A
EAS Single Pulsed Avalanche Energy note2 110 mJ
PD Power Dissipation 81 W
RθJA Thermal Resistance, Junction to Case 65 ℃/W
RθJC Thermal Resistance Junction-Case 1 4 ℃/W
TJ, TSTG Operating and Storage Temperature Range -55 to +175
Symbol Parameter Conditions Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 24 --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.018 --- V/℃
VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 0.50 0.65 1.0 V
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=30A --- 2.8 4.0 mΩ
RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=20A --- 4.0 6.0
IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V --- --- 1 μA
IGSS Gate-Body Leakage Current VGS=±10V, VDS=0V --- --- ±100 nA
Ciss Input Capacitance VDS=10V,VGS=0V,f=1MHZ --- 3200 --- pF
Coss Output Capacitance --- 460 ---
Crss Reverse Transfer Capacitance --- 446 ---
Qg Total Gate Charge VGS=4.5V,VDS=10V,ID=30A --- 11.05 --- nC
Qgs Gate-Source Charge --- 1.73 ---
Qgd Gate-Drain Charge --- 3.1 ---
tD(on) Turn-on Delay Time VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω --- 9.7 --- ns
tr Turn-on Rise Time --- 37 ---
tD(off) Turn-off Delay Time --- 63 ---
tf Turn-off fall Time --- 52 ---
VSD Diode Forward Voltage IS=7.6A,VGS=0V --- --- 1.2 V
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