The WSD30L88DN56 is the highest performance trench Dual P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD30L88DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Advanced high cell density Trench technology ，Super Low Gate Charge ，Excellent CdV/dt effect decline ，100% EAS Guaranteed ，Green Device Available.AOS

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-30	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ -10V1	-49	A
ID@TC=100℃	Continuous Drain Current, VGS @ -10V1	-23	A
IDM	Pulsed Drain Current2	-120	A
EAS	Single Pulse Avalanche Energy3	68	mJ
PD@TC=25℃	Total Power Dissipation4	40	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

High Frequency Point-of-Load Synchronous，Buck Converter for MB/NB/UMPC/VGA，Networking DC-DC Power System，Load Switch，E-cigarettes, wireless charging, motors, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.