WINSOK MOSFET | P-Channel -40V -18A DFN2X2-6L | Factory Direct

WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

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PRODUCTS DETAILS

The voltage of WSD4018DN22 MOSFET is -40V, the current is -18A, the resistance is 26mΩ, the channel is P-channel, and the package is DFN2X2-6L.Advanced high cell density Trench technology, Super Low Gate Charge, Excellent Cdv/dt effect decline Green Device Available,Face recognition equipment MOSFET, e-cigarette MOSFET, small household appliances MOSFET, car charger MOSFET.AOS MOSFET AON2409,POTENS MOSFET PDB3909L

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-40	V
VGS	Gate-Source Voltage	±20	V
I_D@T_c=25℃	Continuous Drain Current, V_GS @ -10V¹	-18	A
I_D@T_c=70℃	Continuous Drain Current, V_GS @ -10V¹	-14.6	A
IDM	300μS Pulsed Drain Current,V_GS=-4.5V²	54	A
P_D@T_c=25℃	Total Power Dissipation³	19	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , I_D=-1mA	---	-0.01	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=-10V , I_D=-8.0A	---	26	34	mΩ
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=-4.5V , I_D=-6.0A	---	31	42	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =-250uA	-1.0	-1.5	-3.0	V
△V_GS(th)	V_GS(th)Temperature Coefficient	V_GS=V_DS , I_D =-250uA	---	3.13	---	mV/℃
IDSS	Drain-Source Leakage Current	V_DS=-40V , V_GS=0V , T_J=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current	V_DS=-40V , V_GS=0V , T_J=55℃	---	---	-5	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
Q_g	Total Gate Charge (-4.5V)	V_DS=-20V , V_GS=-10V , I_D=-1.5A	---	27	---	nC
Q_gs	Gate-Source Charge		---	2.5	---
Q_gd	Gate-Drain Charge		---	6.7	---
Td(on)	Turn-On Delay Time	V_DD=-20V , V_GS=-10V ,R_G=3Ω , RL=10Ω	---	9.8	---	ns
T_r	Rise Time		---	11	---
Td(off)	Turn-Off Delay Time		---	54	---
T_f	Fall Time		---	7.1	---
C_iss	Input Capacitance	V_DS=-20V , V_GS=0V , f=1MHz	---	1560	---	pF
Coss	Output Capacitance		---	116	---
C_rss	Reverse Transfer Capacitance		---	97	---

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