WSD3023DN56 N-Ch and P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
WSD3023DN56 N-Ch and P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
Experience superior performance with WSD3023DN56 N-Ch and P-Channel 30V/-30V MOSFET. As a factory, we offer high-quality MOSFETs with a current rating of 14A/-12A. Shop now!
The WSD3023DN56 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3023DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.Advanced high cell density Trench technology ,Super Low Gate Charge ,Excellent CdV/dt effect decline ,100% EAS Guaranteed ,Green Device Available.PANJIT PJQ5606
Symbol
Parameter
Rating
Units
N-Ch
P-Ch
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
±20
V
ID
Continuous Drain Current, VGS(NP)=10V,Ta=25℃
14*
-12
A
Continuous Drain Current, VGS(NP)=10V,Ta=70℃
7.6
-9.7
A
IDP a
Pulse Drain Current Tested, VGS(NP)=10V
48
-48
A
EAS c
Avalanche Energy, Single pulse , L=0.5mH
20
20
mJ
IAS c
Avalanche Current, Single pulse , L=0.5mH
9
-9
A
PD
Total Power Dissipation, Ta=25℃
5.25
5.25
W
TSTG
Storage Temperature Range
-55 to 175
-55 to 175
℃
TJ
Operating Junction Temperature Range
175
175
℃
RqJA b
Thermal Resistance-Junction to Ambient,Steady State
60
60
℃/W
RqJC
Thermal Resistance-Junction to Case,Steady State
6.25
6.25
℃/W
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
RDS(ON)d
Static Drain-Source On-Resistance
VGS=10V , ID=8A
---
14
18.5
mΩ
VGS=4.5V , ID=5A
---
17
25
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.3
1.8
2.3
V
IDSS
Drain-Source Leakage Current
VDS=20V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=20V , VGS=0V , TJ=85℃
---
---
30
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
Qge
Total Gate Charge
VDS=15V, VGS=4.5V, IDS=8A
---
5.2
---
nC
Qgse
Gate-Source Charge
---
1.0
---
Qgde
Gate-Drain Charge
---
2.8
---
Td(on)e
Turn-On Delay Time
VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.
---
6
---
ns
Tre
Rise Time
---
8.6
---
Td(off)e
Turn-Off Delay Time
---
16
---
Tfe
Fall Time
---
3.6
---
Cisse
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
545
---
pF
Cosse
Output Capacitance
---
95
---
Crsse
Reverse Transfer Capacitance
---
55
---
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA,Networking DC-DC Power System ,CCFL Back-light Inverter,Drones, motors, automotive electronics, major appliances.