High-Performance Dual P-channel MOSFET | -15V -4.6A DFN2X2-6L

The voltage of WSD4280DN22 MOSFET is -15V, the current is -4.6A, the resistance is 47mΩ, the channel is Dual P-channel, and the package is DFN2X2-6L.Bidirectional blocking switch; DC-DC conversion applications;Li-battery charging;E-cigarette MOSFET, wireless charging MOSFET, car charging MOSFET, controller MOSFET, digital product MOSFET, small household appliances MOSFET, consumer electronics MOSFET.PANJIT MOSFET PJQ2815

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-15	V
VGS	Gate-Source Voltage	±8	V
I_D@T_c=25℃	Continuous Drain Current, V_GS = -4.5V¹	-4.6	A
IDM	300μS Pulsed Drain Current, (V_GS =-4.5V)	-15	A
P_D	Power Dissipation Derating above T_A= 25°C (Note 2)	1.9	W
TSTG,T_J	Storage Temperature Range	-55 to 150	℃
RθJA	Thermal Resistance Junction-ambient ¹	65	℃/W
RθJC	Thermal Resistance Junction-Case¹	50	℃/W

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=-250uA	-15	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , I_D=-1mA	---	-0.01	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=-4.5V , I_D=-1A	---	47	61	mΩ
		V_GS=-2.5V , I_D=-1A	---	61	80
		V_GS=-1.8V , I_D=-1A	---	90	150
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =-250uA	-0.4	-0.62	-1.2	V
△V_GS(th)	V_GS(th)Temperature Coefficient	V_GS=V_DS , I_D =-250uA	---	3.13	---	mV/℃
IDSS	Drain-Source Leakage Current	V_DS=-10V , V_GS=0V , T_J=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current	V_DS=-10V , V_GS=0V , T_J=55℃	---	---	-5	uA
IGSS	Gate-Source Leakage Current	V_GS=±12V , V_DS=0V	---	---	±100	nA
gfs	Forward Transconductance	V_DS=-5V , I_D=-1A	---	10	---	S
R_g	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz	---	2	---	Ω
Q_g	Total Gate Charge (-4.5V)	V_DS=-10V , V_GS=-4.5V , I_D=-4.6A	---	9.5	---	nC
Q_gs	Gate-Source Charge		---	1.4	---
Q_gd	Gate-Drain Charge		---	2.3	---
Td(on)	Turn-On Delay Time	V_DD=-10V ,V_GS=-4.5V , R_G=1Ω I_D=-3.9A,	---	15	---	ns
T_r	Rise Time		---	16	---
Td(off)	Turn-Off Delay Time		---	30	---
T_f	Fall Time		---	10	---
C_iss	Input Capacitance	V_DS=-10V , V_GS=0V , f=1MHz	---	781	---	pF
Coss	Output Capacitance		---	98	---
C_rss	Reverse Transfer Capacitance		---	96	---